Ion implantation system and method

摘要

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

主权项

1. An ion implantation system, comprising:
an ion source including an arc chamber, arranged to ionize gas therein; a dopant gas source; a dopant gas feed line for introducing a dopant gas from the dopant gas source to the arc chamber under conditions producing ionization of the dopant gas; and a cooling structure associated with the dopant gas feed line, and arranged to cool dopant gas in the dopant gas feed line, to thereby combat heating of the dopant gas by heat generated in operation of the arc chamber, and decomposition of the dopant gas resulting from such heat.