| 发明名称 | Semiconductor device | ||
| 摘要 | The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR. | ||
| 申请公布号 | US9111852(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201214235784 | 申请日期 | 2012.07.27 |
| 申请人 | ROHM CO., LTD. | 发明人 | Aketa Masatoshi;Yokotsuji Yuta |
| 分类号 | H01L29/16;H01L29/20;H01L29/872;H01L29/861;H01L29/08 | 主分类号 | H01L29/16 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A semiconductor device comprising: a first conductivity type semiconductor layer made of a wide bandgap semiconductor, and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, wherein a threshold voltage Vth is 0.3 V to 0.7 V, and a leakage current Jr in a rated voltage VR is 1×109 A/cm2 to 1×10−4 A/cm2. | ||
| 地址 | Kyoto JP | ||