Array substrate, manufacturing method thereof and LCD

摘要

There is disclosed an array substrate which has a base substrate and data lines and gate lines on the base substrate, The data lines and gate lines intersect with each other to define pixel units, and each pixel unit comprises a pixel electrode, a gate electrode, a source electrode, a drain electrode and an active layer, and the pixel electrode, the gate electrode and the gate line adjoin to the base substrate, and the gate electrode is formed of a same material as that for forming the pixel electrode.

主权项

1. A method for manufacturing an array substrate, comprising a step to form conductive layer patterns and insulation layer patterns on a base substrate,
wherein the conductive layer patterns at least comprise a gate line, a gate electrode, an active layer, a source electrode, a drain electrode, a data line and a pixel electrode, wherein the gate line does not overlap with the gate electrode; and wherein forming of the gate line, the gate electrode, and the pixel electrode comprises: sequentially forming a transparent conductive thin film and a gate metal thin film on the base substrate; applying photoresist on the gate metal thin film; exposing with a double-tone mask plate and developing the photoresist to form a photoresist pattern comprising a photoresist-retained region, a photoresist-partially-retained region and a photoresist-removed region, wherein a photoresist thickness of the photoresist-retained region is larger than that in the photoresist-partially-retained region, the photoresist of the photoresist-retained region merely covers a region for forming the gate line, the photoresist of the photoresist-partially-retained region covers a region for forming the gate electrode and the pixel electrode, and the photoresist-removed region is other regions; conducting a first etching to remove the gate metal thin film and the transparent conductive thin film in the photoresist-removed region to form the gate line; ashing to remove the photoresist by the photoresist thickness in the photoresist-partially-retained region; conducting a second etching to remove the gate metal thin film exposed in the photoresist-partially-retained region to form the gate electrode and the pixel electrode; and removing the remaining photoresist.