3-D nonvolatile memory device and method of manufacturing the same

摘要

A three-dimensional (3-D) nonvolatile memory device includes a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, bent along the inclined sidewall of the support, wherein each of the channel structures comprises a cell region and a contact region, and the channel layers are exposed in the contact region; select lines formed over the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines.

主权项

1. A three-dimensional (3-D) nonvolatile memory device, comprising:
a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, wherein each of the channel structures comprises a cell region where the channel layers are horizontally stacked and a contact region where the channel layers are bent upward along the inclined sidewall of the support and each of the channel layers are exposed; select lines formed over the contact region of the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines, wherein the support has a trapezoidal shape and widths of the channel layers exposed on the top surface of the channel structures are determined by an inclined angle of the support.