Concentric phase change memory element

摘要

The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.

主权项

1. A method of forming a memory device comprising:
forming a pillar of a first phase change material atop a substrate, the substrate comprising a first electrically conductive material, the first phase change material is in electrical communication with the first electrically conductive material; forming a dielectric spacer overlying the pillar of the first phase change material, wherein the dielectric spacer is positioned atop and in direct physical contact with an upper surface of the pillar of the first phase change material, and is abutting a sidewall of the pillar of the first phase change material; forming a layer of a second phase change material overlying the pillar of the first phase change material; and planarizing to provide a planar upper surface, wherein an upper surface of the second phase change material is coplanar with an upper surface of the dielectric spacer, and an upper surface of the first phase change material.