| 发明名称 |
Multiple data rate memory with read timing information |
| 摘要 |
A memory includes a memory array, read circuitry, and a strobe generator. The read circuitry is configured to provide read data from the memory array in response to a read request, wherein the read circuitry provides the read data in accordance with a first clock. The strobe generator is configured to provide a strobe signal with the read data, wherein the strobe generator provides the strobe signal in accordance with a second clock. The second clock is out of phase with the first clock by a phase in a range of 30 degrees to 150 degrees. |
| 申请公布号 |
US9111607(B2) |
申请公布日期 |
2015.08.18 |
| 申请号 |
US201313907484 |
申请日期 |
2013.05.31 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Gay James G. |
| 分类号 |
G11C7/22;G06F13/16;G06F13/42;G11C7/10 |
主分类号 |
G11C7/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory comprising:
a memory array; read circuitry coupled to the memory array and configured to provide read data from the memory array in response to a read request, wherein the read circuitry provides the read data in accordance with a first clock; and a strobe generator configured to provide a strobe signal with the read data, wherein the strobe generator provides the strobe signal in accordance with a second clock which is out of phase with the first clock by a phase in a range of 30 degrees to 150 degrees; wherein the strobe generator is configured to transition the strobe signal at rising and falling edges of the second clock; wherein the strobe generator is configured to receive the second clock and an inverse of the second clock, and is configured to transition the strobe signal at zero crossings of the second clock and the inverse of the second clock. |
| 地址 |
Austin TX US |
