Methods of forming replacement gate structures on semiconductor devices

摘要

One illustrative method disclosed herein includes, among other things, forming a fin protection layer around a fin, forming a sacrificial gate electrode above a section of the fin protection layer, forming at least one sidewall spacer adjacent the sacrificial gate electrode, removing the sacrificial gate electrode to define a gate cavity that exposes a portion of the fin protection layer, oxidizing at least the exposed portion of the fin protection layer to thereby form an oxidized portion of the fin protection layer, and removing the oxidized portion of the fin protection layer so as to thereby expose a surface of the fin within the gate cavity.

主权项

1. A method, comprising:
forming a fin in a semiconductor substrate; forming a fin protection layer around said fin; forming a sacrificial gate electrode above a section of said fin protection layer; forming at least one sidewall spacer adjacent said sacrificial gate electrode; removing said sacrificial gate electrode to define a gate cavity that exposes a portion of said fin protection layer; oxidizing at least said exposed portion of said fin protection layer to thereby form an oxidized portion of said fin protection layer; and removing said oxidized portion of said fin protection layer so as to thereby expose a surface of said fin within said gate cavity.