| 摘要 |
A high-precision oscillator includes a voltage reference module which includes multiple measured Field Effect Transistors and arranged for detecting process corners for the measured Field Effect Transistors to generate a reference voltage containing process corner information of the measured Field Effect Transistors, a compensation current generating module which is arranged for receiving the reference voltage, making a temperature compensation for the reference voltage, and generating a compensation current which includes both the process compensation and temperature compensation, and a ring oscillator which is arranged for receiving the compensation current and outputting a clock with stable frequency. The high-precision oscillator designs the process compensation and the temperature compensation separately, which are adjustable due to one of them will not be influenced by the other; and frequency of its outputted clock is not influenced by process and temperature, thereby precision of the outputted clock is improved. |
| 主权项 |
1. A high-precision oscillator, comprising:
a voltage reference module, and the voltage reference module comprising multiple measured Field Effect Transistors and arranged for detecting process corners for the measured Field Effect Transistors to generate a reference voltage which contains process corner information of the measured Field Effect Transistors; a compensation current generating module, to which the reference voltage is inputted, to provide a temperature compensation for the reference voltage and generate a compensation current which includes both process compensation and temperature compensation; and a ring oscillator, arranged for receiving the compensation current generated by the compensation current generating module, and then outputting a clock with stable frequency according to the compensation current; wherein the voltage reference module comprises a first Field Effect Transistor, a second Field Effect Transistor, a third Field Effect Transistor, a fourth Field Effect Transistor, a fifth Field Effect Transistor, a sixth Field Effect Transistor, a seventh Field Effect Transistor, an eighth Field Effect Transistor, a first resistor and a second resistor; gates and drains of the first Field Effect Transistor, the second Field Effect Transistor and the third Field Effect Transistor are grounded, and a source of the first Field Effect Transistor is connected with a source of the seventh Field Effect Transistor, a source of the second Field Effect Transistor is connected with one terminal of the first resistor, a source of the third Field Effect Transistor is connected with one terminal of the second resistor, and the first Field Effect Transistor, the second Field Effect Transistor and the third Field Effect Transistor are the measured Field Effect Transistors so as to provide the process corner information of the Field Effect Transistors; sources of the fourth Field Effect Transistor, the fifth Field Effect Transistor and the sixth Field Effect Transistor are connected with an external power source, and their gates are jointly connected to a drain of the fifth Field Effect Transistor, a drain of the fourth Field Effect Transistor is connected with a drain of the seventh Field Effect Transistor, a drain of the fifth Field Effect Transistor is connected with a drain of the eighth Field Effect Transistor, and a drain of the sixth Field Effect Transistor is connected with the other terminal of the second resistor to output the reference voltage; a gate and a drain of the seventh Field Effect Transistor are connected together which are also connected with a gate of the eighth Field Effect Transistor, and a source of the eighth Field Effect Transistor is connected with the other terminal of the first resistor. |
