Thin film transistor substrate

摘要

A thin film transistor substrate includes: pluralities of gate lines and data lines arranged to define a plurality of pixel regions, and a plurality of thin film transistors formed on the pixel regions in such a manner as to include first and second thin film transistors connected to the same gate line and the pixel regions adjacent to each other. Each of the first and second thin film transistors includes: a gate electrode connected to the gate line; a semiconductor layer formed on the gate line in an octagon shape; a source electrode connected to the data line; and a drain electrode formed in an opposite shape to the source electrode.

主权项

1. A thin film transistor substrate comprising:
a plurality of gate lines and a plurality of data lines arranged to define a plurality of pixel regions including the first and the second pixel regions adjacent to a same gate line which is between the first and second pixel regions, are disposed between first and second parallel and adjacent data lines; and a plurality of thin film transistors including each of first and second thin film transistors arranged alternately to each other in the same gate line so as to be connected to the same gate line and disposed along the same gate line which intersects respectively with the first and the second parallel adjacent data lines, each of the first and the second thin film transistors includes:
a respective gate electrode connected to the same gate line;a respective semiconductor layer on the same gate line;a respective source electrode connected to the corresponding data line; anda respective drain electrode in an opposite shape to the respective source electrode;wherein respective the gate electrode and respective the semiconductor layer are overlapped in the corresponding data line.