Laser diode

摘要

A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

主权项

1. A laser diode comprising:
an n-side electrode touching an n-GaN substrate, the n-GaN substrate being between an n-GaN cladding layer and the n-side electrode; an n-AlGaN guide layer touching the n-GaN cladding layer, the n-GaN cladding layer between the n-GaN substrate and the n-AlGaN guide layer, wherein: a concentration of an n-type impurity in the n-AlGaN guide layer is at least 3×1018 cm−3 along with a concentration of an n-type impurity in the n-GaN substrate being less than 3×1018 cm−3 and a concentration of an n-type impurity in the n-GaN cladding layer being less than 3×1018 cm−3.