发明名称 Methods of forming memory cells and arrays
摘要 Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.
申请公布号 US9112150(B2) 申请公布日期 2015.08.18
申请号 US201313948980 申请日期 2013.07.23
申请人 Micron Technology, Inc. 发明人 Redaelli Andrea;Servalli Giorgio;Cupeta Carmela;Pellizzer Fabio
分类号 H01L45/00;H01L27/24 主分类号 H01L45/00
代理机构 Wells St. John P.S. 代理人 Wells St. John P.S.
主权项 1. A method of forming memory cells, comprising: forming a plurality of heater structures over an array of electrical nodes; the array of electrical nodes having rows extending along a first direction and having columns extending along a second direction substantially orthogonal to the first direction; wordlines being under the array of electrical nodes and extending along the first direction; forming a phase change material across the plurality of heater structures; patterning the phase change material into a plurality of confined structures; the plurality of confined structures being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures in the plurality of confined structures; forming bitlines across the plurality of confined structures, with the bitlines extending along the second direction; and wherein the plurality of heater structures are patterned from lines of heater material that extend along the first direction, and wherein the patterning of the phase change material into the plurality of confined structures comprises: forming first trenches through the phase change material, with the first trenches extending along the first direction;lining the first trenches with a first insulative material of the one or more insulative materials; after forming and lining the first trenches, forming second trenches through the phase change material and the lines of heater material, with the second trenches extending along the second direction and patterning the lines of heater material into the plurality of heater structures; and lining the second trenches with a second insulative material of the one or more insulative materials.
地址 Boise ID US