Method of fabricating a semiconductor structure with ion-implanted conductive layer

摘要

An embodiment of the current disclosure includes a method of providing a substrate, forming a polysilicon layer over the substrate, forming a first photoresist layer on the polysislicon layer, creating a first pattern on the first photoresist layer, wherein some portions of the polysilicon layer are covered by the first photoresist layer and some portions of the polysilicon layer are not covered by the first photoresist layer, implanting ions into the portions of the polysilicon layer that are not covered by the first photoresist layer, removing the first photoresist layer from the polysilicon layer, forming a second photoresist layer on the polysilicon layer, creating a second pattern on the second photoresist layer, and implanting ions into the portions of the polysilicon layer that are not covered by the second photoresist layer, removing the second photoresist layer from the polysilicon layer, and removing portions of the polysilicon layer using an etchant.

主权项

1. A method of making a semiconductor structure, the method comprising:
providing a substrate; forming a gate dielectric layer over the substrate and retaining the gate dielectric layer in contact with the substrate; forming a conductive layer over the gate dielectric layer, wherein the conductive layer is in physical contact with the gate dielectric layer; forming a first photoresist layer on the conductive layer; creating a first pattern on the first photoresist layer, wherein some portions of the conductive layer are covered by the first photoresist layer and some portions of the conductive layer are not covered by the first photoresist layer; implanting ions into the portions of the conductive layer that are not covered by the first photoresist layer; removing the first photoresist layer from the conductive layer; forming a second photoresist layer on the conductive layer; creating a second pattern on the second photoresist layer before portions of the conductive layer are removed, wherein some portions of the conductive layer are covered by the second photoresist layer and some portions of the conductive layer are not covered by the second photoresist layer; implanting ions into the portions of the conductive layer that are not covered by the second photoresist layer; removing the second photoresist layer from the conductive layer; and removing portions of the conductive layer covered by the first pattern on the first photoresist layer and the second pattern on the second photoresist layer using an etchant.