Thin-film device, thin-film device array, and method of manufacturing thin-film device

摘要

A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area.

主权项

1. A thin-film device, comprising:
a substrate; and a first device and a second device which are located above the substrate, the first device including: a first gate electrode formed above the substrate; a first gate insulating film covering the first gate electrode; and a first thin film located opposite to the first gate electrode with the first gate insulating film in between, and the second device including: a second gate electrode located at a position different from a position where the first gate electrode is formed; a second gate insulating film covering the second gate electrode; and a second thin film located opposite to the second gate electrode with the second gate insulating film in between, wherein the first thin film includes a strip-shaped first area and a strip-shaped second area located on each widthwise side of the strip-shaped first area, the strip-shaped second area including crystal grains having an average grain size smaller than an average grain size of crystal grains included in the strip-shaped first area, the first device has a channel which is a part including a plurality of the strip-shaped first areas and a plurality of the strip-shaped second areas formed to appear alternately, the second thin film includes a third area including crystal grains having an average grain size smaller than the average grain size in the strip-shaped first area, the second device has a channel which is the third area, and the strip-shaped first area includes crystal grains which are in contact with the strip-shaped second area on the each side of the strip-shaped first area.