| 发明名称 | Electron-emitting cold cathode device | ||
| 摘要 | One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region, one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s). | ||
| 申请公布号 | US9111711(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201214359534 | 申请日期 | 2012.11.26 |
| 申请人 | SELEX ES S.P.A. | 发明人 | Ulisse Giacomo;Brunetti Francesca;di Carlo Aldo;Ricci Ferdinando;Gemma Filippo;Fiorello Anna Maria;Dispenza Massimiliano;Buttiglione Roberta |
| 分类号 | H01J19/24;H01J1/304;H01J9/02;H01J19/38;H01J21/10;H01J21/20;H01J3/02;H01J19/32;H01J19/46 | 主分类号 | H01J19/24 |
| 代理机构 | Dorsey & Whitney LLP | 代理人 | Dorsey & Whitney LLP |
| 主权项 | 1. An electron-emitting cold cathode device, comprising: a cathode electrode that lies on a cathode plane and includes, in an active region, a cathode fingered structure comprising one or more cathode straight-finger-shaped terminals, each with a respective main extension direction substantially parallel to a first reference direction; for each cathode straight-finger-shaped terminal, one or more respective electron emitters formed on, and in ohmic contact with, the cathode straight-finger-shaped terminal, each electron emitter having a respective main extension direction substantially perpendicular to the cathode plane; and a gate electrode that lies on a gate plane substantially parallel to, and spaced apart from, the cathode plane, does not overlap the cathode electrode and includes, in the active region, a gate fingered structure comprising two or more gate straight-finger-shaped terminals, each with a respective main extension direction substantially parallel to the first reference direction, the two or more gate straight-finger-shaped terminals being interlaced with the one or more cathode straight-finger-shaped terminals and are designed to modulate an electron beam emitted, in use, by the one or more respective electron emitters. | ||
| 地址 | Rome IT | ||