| 发明名称 | Semiconductor structure | ||
| 摘要 | A semiconductor structure including a silicon substrate, a nucleation layer and a plurality of multi-layer sets is provided. The nucleation layer is disposed on the silicon substrate. The multi-layer sets are stacked over the nucleation layer, and each of the multi-layer sets includes a plurality of first sub-layers and a plurality of second sub-layers stacked alternately. A material of the first sub-layers and the second sub-layers includes Al-containing III-V group compound, wherein an average content of aluminum of the multi-layer sets decreases as a minimum distance between each of the multi-layer sets and the silicon substrate increases, and an aluminum content of the first sub-layers is different from an aluminum content of the second sub-layers. | ||
| 申请公布号 | US9112077(B1) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201414263978 | 申请日期 | 2014.04.28 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Liao Chen-Zi;Hu Chih-Wei;Liu Hsun-Chih;Fang Yen-Hsiang;Xuan Rong |
| 分类号 | H01L23/52;H01L29/06;H01L33/00;H01L21/00;H01L33/04 | 主分类号 | H01L23/52 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A semiconductor structure, comprising: a silicon substrate; a nucleation layer disposed on the silicon substrate; and a plurality of multi-layer sets stacked over the nucleation layer, each of the multi-layer sets comprising a plurality of first sub-layers and a plurality of second sub-layers stacked alternately, a material of the first sub-layers and the second sub-layers comprising Al-containing III-V group compound, wherein an average aluminum content of the multi-layer sets decreases as a minimum distance between each of the multi-layer sets and the silicon substrate increases, and an aluminum content of the first sub-layers is different from an aluminum content of the second sub-layers. | ||
| 地址 | Hsinchu TW | ||