Method for forming a split-gate device

摘要

A method of forming a semiconductor device in an NVM region and in a logic region uses a semiconductor substrate and includes forming a first layer of a material that can be used as a gate or a dummy gate. An opening is formed in the first layer in the NVM region. The opening is filled with a charge storage layer and a control gate. A select gate, which may be formed from the first layer or from a metal layer, is formed adjacent to the control gate. If it is a metal from a metal layer, the first layer is used to form a dummy gate. A metal logic gate is formed in the logic region by replacing a dummy gate.

主权项

1. A method of forming a semiconductor device in an NVM (non-volatile memory) region and in a logic region using a semiconductor substrate, comprising:
forming a gate material layer over the substrate in the NVM region and the logic region; patterning the gate material layer over the NVM region to form a control gate opening, the control gate opening having an exposed surface; forming a charge storage layer over the exposed surface; forming a control gate in the control gate opening over the charge storage layer; removing the gate material layer from the logic region; forming a high-k layer over the substrate in the logic region; forming a dummy gate layer over the high-k layer; patterning the gate material layer over the NVM region to leave a select gate adjacent to the control gate; patterning the dummy gate layer to leave a dummy gate over the high-k layer; forming an interlayer dielectric around the dummy gate and around the control gate and select gate; and replacing the dummy gate with a metallic logic gate.