Selective formation of metallic films on metallic surfaces

摘要

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

主权项

1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
cleaning the substrate; after cleaning carrying out one or more deposition cycles, each cycle comprising:
contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface; andconverting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal,wherein the selectivity for deposition on the first metal surface relative to the second dielectric surface is greater than about 50%.