| 发明名称 | Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices | ||
| 摘要 | A method of forming a polysilicon layer includes providing a silicon precursor onto an object loaded in a process chamber to form a seed layer. The silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor. The method further includes providing a silicon source on the seed layer. | ||
| 申请公布号 | US9111897(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201213716859 | 申请日期 | 2012.12.17 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Jee Jung-Geun;Kim Jin-Gyun;Choi Ji-Hoon;Hwang Ki-Hyun |
| 分类号 | H01L21/336;H01L21/36;H01L29/66;H01L21/02;H01L27/108;H01L27/115;H01L21/285;H01L21/768;C23C16/24 | 主分类号 | H01L21/336 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A method of forming a polysilicon layer, comprising: providing a silicon precursor onto an object loaded in a process chamber to form a seed layer, wherein the silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor, and wherein the nitrogen containing silicon precursor and the chlorine containing silicon precursor are adsorbed directly on the object; and providing a silicon source on the seed layer. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||