Circuit board and display device including first and second channel layers made of different semiconductor materials

摘要

A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

主权项

1. A circuit board of a display device comprising:
a plurality of transistor elements on an insulating substrate, the plurality of transistor elements including: a first type of the plurality of transistor elements including a first channel layer which is made of a first semiconductor material and arranged in a first area of the insulating substrate; and a second type of the plurality of transistor elements including a second channel layer which is made of a second semiconductor material which is different from the first semiconductor material and being arranged in a second area of the insulating substrate which is outside of the first area; wherein the first area of the insulating substrate is a display area of the display device and the second area of the insulating substrate includes a protection circuit of the display device, and the first semiconductor material is an oxide semiconductor having a first electrical resistivity, and the second semiconductor material has a second electrical resistivity which is higher than the first electrical resistivity, the second type of the plurality of transistor elements are diodes, pairs of the diodes are arranged to define diode short rings, the pairs of the diodes include a first diode and a second diode, the first diode defined by the second type of the plurality of transistor elements includes a first gate electrode, a first source electrode and a first drain electrode wherein the first source electrode is electrically connected to the first gate electrode, the second diode defined by the second type of the plurality of transistor elements includes a second gate electrode, a second source electrode and a second drain electrode wherein the second source electrode is electrically connected to the second gate electrode, and the first drain electrode vertically overlaps the second gate electrode in a single layer, and the second drain electrode vertically overlaps the first gate electrode in a single layer.