发明名称 Optical recording medium
摘要 An optical recording medium includes a recording layer including a reflective layer, two dielectric layers, and a phase-change recording layer. The phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide or a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide. The reflective layer-side dielectric layer of the two dielectric layers contains a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide, a composite oxide composed of indium oxide and gallium oxide, or a composite oxide composed of zinc oxide and aluminum oxide.
申请公布号 US9111555(B2) 申请公布日期 2015.08.18
申请号 US201414256103 申请日期 2014.04.18
申请人 Sony Corporation 发明人 Igari Takahiro;Watanabe Makoto
分类号 G11B7/24;G11B7/2578;G11B7/2433;G11B7/257;G11B7/258;G11B7/243 主分类号 G11B7/24
代理机构 Wolf, Greenfield & Sacks, P.C. 代理人 Wolf, Greenfield & Sacks, P.C.
主权项 1. An optical recording medium comprising: a recording layer including a reflective layer, two dielectric layers, and a phase-change recording layer, wherein the phase-change recording layer-side dielectric layer of the two dielectric layers contains tantalum oxide or a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide; and the reflective layer-side dielectric layer of the two dielectric layers contains a composite oxide composed of silicon oxide, indium oxide, and zirconium oxide, a composite oxide composed of indium oxide and gallium oxide, or a composite oxide composed of zinc oxide and aluminum oxide; wherein the phase-change recording layer contains bismuth, germanium, tellurium, and silver; and wherein a content of silver relative to a total amount of bismuth, germanium, tellurium, and silver is within a range of 2.0 atomic % or more and 3.5 atomic % or less.
地址 Tokyo JP