Method for fabricating semiconductor device having spacer elements

摘要

The present disclosure describes a method of fabricating semiconductor device including providing a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is formed on the substrate abutting the first gate stack. In an embodiment, a source/drain region is then formed. A second spacer element is then formed is adjacent the first spacer element. The second spacer element has a second height from the surface of the substrate, and the first height is greater than the second height. In embodiments, the second spacer element is used as an etch stop in forming a contact to the source/drain region.

主权项

1. A method for making a semiconductor device comprising:
providing a gate stack on a semiconductor substrate; forming a first spacer element abutting the gate stack; forming a source region and a drain region in the semiconductor substrate adjacent the gate stack after forming the first spacer element; forming a silicon oxide layer on the semiconductor substrate after forming the source and drain regions; and etching the silicon oxide layer to provide a second spacer element including a first sidewall and a second sidewall, wherein the first sidewall abuts the first spacer element and wherein the second sidewall abuts a raised source/drain region.