MOFSET mismatch characterization circuit

摘要

A semiconductor device comprises a plurality of transistor mismatch circuits formed on a semiconductor wafer; and a characterization circuit formed on the semiconductor wafer. The characterization circuit is coupled to receive input provided by the absolute value circuits simultaneously which themselves receive inputs from the mismatch circuits simultaneously and is configured to output a standard deviation of mismatch between transistors in the mismatch circuits.

主权项

1. A semiconductor device comprising:
a summing amplifier; a plurality of transistor mismatch circuits, wherein the transistor mismatch circuits output a value indicative of mismatch between transistors in a respective one of the transistor mismatch circuits; and first output voltages Vo1 and second output voltages Vo2 from each of the transistor mismatch circuits coupled simultaneously to an input of the summing amplifier, wherein the summing amplifier provides a value indicating a standard deviation of the mismatch between the transistors in the plurality of mismatch circuits simultaneously with the first and second output voltages of the plurality of transistor mismatch circuits being applied to the summing amplifier.