发明名称 OPERATING METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM
摘要 According to an embodiment of the present invention, an operation method of a non-volatile memory device includes the steps of: receiving multiple sub-page data and a write command from an external device; firstly main-programming at least one of the received sub-page data on memory cells included in a main region; buffer-programming the rest of the sub-page data in memory cells included in a buffer region; and secondly main-programming the data, buffer-programmed in the buffer region, in the firstly main-programmed memory cells.
申请公布号 KR20150093006(A) 申请公布日期 2015.08.17
申请号 KR20140013742 申请日期 2014.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH, EUN CHU;KIM, JONG HA;KONG, JUN JIN;SON, HONG RAK
分类号 G06F13/14;G06F12/00 主分类号 G06F13/14
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