| 摘要 |
<p>The present invention relates to a metal layer etching solution composition and, more specifically, to a metal layer etching solution composition including a hydroxyl amine compound, hydrogen peroxide, and an amine-based polymer which includes a compound of the formula 1 having a weight average molecular weight in the range of 200 and 2,500 and a compound of the formula 2 having a weight average molecular weight in the range of 100 and 1,000. Therefore, the metal layer etching solution composition is capable of selectively etching a tungsten-based metal layer and a nitride layer of titanium-based metal; inhibiting the dielectric constant variations and etching of a low dielectric constant layer; and preventing a defect in the joint between a nitride layer of titanium-based metal and a tungsten-based metal layer.</p> |
