气相成膜装置;VAPOR PHASE FILM DEPOSITION APPARATUS

摘要

提供一种可以较少气体消耗量同时实现高挥发成分元素分压、较快流速然后和缓的成膜速度曲线之三要素的成膜装置。;反应器构造系由圆板状晶座、基板自转公转之机构、对向于该圆板状晶座之对向面形成构件、喷射部、材料气体之导入部以及气体排气部来加以构成。基板系藉由基板保持构件(Wafer Holder)加以保持，基板保持构件系被保持于圆板状晶座之承受部。圆板状晶座系相对其中心轴旋转，同时基板会自转。对向面形成构件由于系放射状地交互形成有扇形之凹部及凸部的构造，故流道高度会在周围方向改变。因此，可以较少载体气体流量实现与以往装置之最佳条件相同的成膜品质，可让挥发成分元素之材料气体分压较以往要大幅提高。;The reactor structure 10 is constituted with a disk-like susceptor 20, an opposing face member 30 which opposes the susceptor 20, an injector 40, a material gas introduction portion 60, and a gas exhaust portion 38. A substrate W is retained by a wafer holder 22, and the wafer holder 22 is retained by a supporting member 26 of the susceptor 20. The susceptor 20 revolves around its central axis and the substrate W also rotates by itself. The opposing face member 30 is structured so that a fan-shaped recessed portion 34 and a fan-shaped raised portion 36 are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. As a result, it is possible to realize film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas. It is also possible to dramatically increase a partial pressure of material gases of volatile components, as compared with a conventional case.