| 摘要 |
一实施例包括一设备，该设备包含：一N型层包含具有均与一第一横轴相交之一N型通道、一源极及一汲极之一NMOS装置，该第一横轴与一基材平行；一P型层包含具有均与一第二横轴相交之一P型通道、一源极及一汲极之一PMOS装置，该第二横轴与该基材平行；一第一闸极，对应该N型通道，其与该第二横轴相交；以及一第二闸极，对应该P型通道，其与该第一横轴相交。其它实施例将在文中描述。; a P layer comprising a PMOS device having a P channel, source, and drain that are all intersected by a second horizontal axis that is parallel to the substrate; a first gate, corresponding to the N channel, which intersects the second horizontal axis; and a second gate, corresponding to the P channel, which intersects the first horizontal axis. Other embodiments are described herein. |
