制造闸极绝缘层的方法;METHOD FOR MANUFACTURING GATE INSULATING LAYER

摘要

本发明提供一种制造闸闸极绝缘层的方法，包括：利用化学气相沉积法，在闸极上依次沉积氮化矽层和氧化矽层，得到氮化矽层和氧化矽层顺次层叠的闸极绝缘层，其中闸极为铜闸极。利用本发明的方法制造闸极绝缘层，可有效保护铜闸极和主动层。沉积形成的氮化矽层可有效隔离氧，防止铜被氧化；而沉积形成的氧化矽层可有效隔离氢，防止主动层被还原。此外氮化矽及氧化矽层叠结构的闸极绝缘层可有效阻挡玻璃基板内的硷金属离子，增强抗静电释放能力并降低漏电流，提高等效电容。; and the deposited silicon oxide layer may efficiently insulate hydrogen to prevent the reduction of the active layer. Additionally, the gate insulating layer having the stacked structure of the silicon nitride layer and the silicon oxide layer may efficiently block the alkaline metal ions of the glass substrate to enhance the ability of anti-electrostatic discharge and decrease the leak current, so as to increase the equivalent capacitance.