光阻图型之形成方法及光阻组成物;METHOD FOR FORMING RESIST PATTERN AND RESIST COMPOSITION

摘要

一种光阻图型之形成方法，其为使用含有具有通式(a0-1)所表示之结构单位的高分子化合物之光阻组成物，以使用含有有机溶剂之显影液的负型显影进行图型形成(Patterning)之方法。;通式(a0-1)中，R为氢原子、碳数1~5之烷基或碳数1~5之卤化烷基。Va 0 为可具有醚键结、胺基甲酸酯键结或醯胺键结的2价之烃基。na0为0~2之整数。R 1 为链状或环状之脂肪族烃基。R 2 为与R 1 所键结之碳原子共同形成单环式基之基。R 3 为可具有取代基之环式基。;Here, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va 0 represents a divalent hydrocarbon group; na0is an integer of 0 to 2; R 1 represents a chain or cyclic aliphatic hydrocarbon group; R 2 represents a group for forming a monocyclic group together with the carbon atom to which R 1 is bonded; and R 3 represents an optionally substituted cyclic group.