| 发明名称 |
METHOD OF FORMING MOSFET STRUCTURE |
| 摘要 |
A method of forming a MOSFET structure is provided. In the method, an epitaxial layer is formed. A cap layer is formed above the epitaxial layer. A first trench is formed above the epitaxial layer. A protection layer is deposited within the first trench. The protection layer is a material selected from the group consisting of germanium and silicon-germanium. |
| 申请公布号 |
US2015228483(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201414178399 |
申请日期 |
2014.02.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
FU CHING-FENG;YEN YU-CHAN;KO CHIH-HSIN;LEE CHUN-HUNG;LIN HUAN-JUST;CHANG HUI-CHENG |
| 分类号 |
H01L21/02;H01L23/00;H01L21/306 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a MOSFET structure, comprising:
forming an epitaxial layer; forming a cap layer above the epitaxial layer; forming a first trench above the epitaxial layer; and depositing a protection layer within the first trench, wherein the protection layer is a material selected from the group consisting of germanium and silicon-germanium. |
| 地址 |
Hsinchu TW |
