发明名称 TRANSPARENT QUANTUM DOT LIGHT-EMITTING DIODES WITH DIELECTRIC/METAL/DIELECTRIC ELECTRODE
摘要 Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs is a dielectric/metal/dielectric layered structure, where the first dielectric comprises metal oxide nanoparticles or polymer-nanoparticle blends and is 10 to 40 nm in thickness, the metal layer is 5 to 25 nm in thickness, and the second dielectric layer is a nanoparticulate, polymer-nanoparticle blend or continuous layer of 30 to 200 nm in thickness and is situated distal to the light emitting layer of the QD-LED.
申请公布号 US2015228850(A1) 申请公布日期 2015.08.13
申请号 US201314424540 申请日期 2013.09.26
申请人 UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. 发明人 Zheng Ying;Cao Weiran;Xue Jiangeng;Holloway Paul H.
分类号 H01L33/06;H01L33/00;H01L33/30;H01L33/28;H01L33/26;H01L33/08;H01L33/40 主分类号 H01L33/06
代理机构 代理人
主权项 1. A quantum dot light emitting diode (QD-LED) comprising: a light emitting layer comprising a plurality of quantum dots (QDs); and at least one dielectric/metal/dielectric (DMD) electrode comprising a first dielectric layer, a metal layer and a second dielectric layer, wherein the first dielectric layer comprises nanoparticles or polymer-nanoparticle blends.
地址 GAINESVILLE FL US