发明名称 |
FIELD EFFECT TRANSISTOR USING GRAPHENE |
摘要 |
According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode. |
申请公布号 |
US2015228804(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201514693680 |
申请日期 |
2015.04.22 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Jae-ho;PARK Seong-jun;BYUN Kyung-eun;SEO David;SONG Hyun-jae;SHIN Hyung-cheol;LEE Jae-hong;CHUNG Hyun-jong;HEO Jin-seong |
分类号 |
H01L29/786;H01L29/66;H01L29/16 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |