SEMICONDUCTOR DEVICE

摘要

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

主权项

1. A semiconductor device comprising:
a first transistor in a driver portion over a surface; and a second transistor in a pixel portion over the surface, wherein the first transistor comprises:
a first oxide semiconductor film comprising a first region, a second region, and a third region, the second region between the first region and the third region;a first insulating film over the first oxide semiconductor film;a gate electrode overlapping with the second region of the first oxide semiconductor film with the first insulating film interposed therebetween;a second insulating film over the gate electrode and the first oxide semiconductor film; anda source electrode and a drain electrode over the second insulating film, wherein the second insulating film is a nitride insulating film, wherein each of the first region and the third region of the first oxide semiconductor film is in contact with the second insulating film, wherein the first oxide semiconductor film has a multilayer structure comprising a first oxide semiconductor layer and a second oxide semiconductor layer on and in contact with the first oxide semiconductor layer, wherein a composition of metal elements in the first oxide semiconductor layer is different from a composition of metal elements in the second oxide semiconductor layer, wherein the second transistor comprises:
a second oxide semiconductor film comprising a first region, a second region, and a third region, the second region between the first region and the third region;a third insulating film over the second oxide semiconductor film;a gate electrode overlapping with the second region of the second oxide semiconductor film with the third insulating film interposed therebetween;the second insulating film over the gate electrode and the second oxide semiconductor film; anda source electrode and a drain electrode over the second insulating film, wherein each of the first region and the third region of the second oxide semiconductor film is in contact with the second insulating film, and wherein the first oxide semiconductor film is thicker than the second oxide semiconductor film.