SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device according to an embodiment includes a semiconductor layer. A first conductivity-type source layer is provided in the semiconductor layer. A second conductivity-type drain layer is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer between the source layer and the drain layer. A gate electrode includes a first gate part partially provided on the gate dielectric film on a side of the source layer and a second gate part partially provided on the gate dielectric film on a side of the drain layer. A length of crystal grains of the first gate part in a channel length direction is longer than that of crystal grains of the second gate part in the channel length direction.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a first conductivity-type source layer in the semiconductor layer; a second conductivity-type drain layer in the semiconductor layer; a gate dielectric film on the semiconductor layer between the source layer and the drain layer; and a gate electrode comprising a first gate part partially located on the gate dielectric film on a side of the source layer and a second gate part partially located on the gate dielectric film on a side of the drain layer, wherein a length of crystal grains of the first gate part in a channel length direction is longer than that of crystal grains of the second gate part in the channel length direction.