Formation of High Quality Fin in 3D Structure by Way of Two-Step Implantation

摘要

The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a fin structure over a substrate, the fin structure containing a semiconductor material; performing a first implantation process to a region of the fin structure to form a fin seed within the region of the fin structure, wherein the fin seed has a crystal structure, and wherein the first implantation process is performed at a process temperature above about 100 degrees Celsius; performing a second implantation process to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous, wherein the second implantation process is performed at a process temperature below about 0 degrees Celsius; and thereafter performing an annealing process to recrystallize the region of the fin structure via the fin seed.