| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING NANOWIRE TRANSISTORS WITH HYBRID CHANNELS |
| 摘要 |
A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor. |
| 申请公布号 |
US2015228652(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201414176224 |
申请日期 |
2014.02.10 |
| 申请人 |
International Business Machines Corportion |
发明人 |
Cheng Kangguo;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L27/092;H01L29/16;H01L29/161;H01L21/8238;H01L21/02;H01L21/033;H01L21/306;H01L27/06;H01L29/06 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an n-type field effect transistor comprising a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate; and a p-type field effect transistor comprising a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate, wherein each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than a shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor. |
| 地址 |
Armonk NY US |
