Diode Circuit Layout Topology With Reduced Lateral Parasitic Bipolar Action

摘要

Diode circuit layout topologies and methods are disclosed that exhibit reduced lateral parasitic bipolar characteristics at lateral parasitic bipolar circuit emitter edges during ESD or other voltage events as compared to conventional circuit layout topologies. The disclosed diode circuit layout topologies may be implemented to recess parasitic emitter ends relative to surrounding well ties, for example, to reduce or substantially eliminate parasitic bipolar action at lateral emitter edges of the circuitry during ESD events so as to provide higher current threshold for device failure, allowing for smaller device area and/or improved ESD robustness for a given circuit device.

主权项

1. A semiconductor circuit device, comprising:
a semiconductor substrate; and at least one diode structure formed in the substrate, the diode structure comprising elongated N+ doped regions alternating with elongated P+ doped regions that are together surrounded by a P+ doped or N+ doped/Nwell guard ring; where each of the elongated N+ doped regions extend between first and second ends with no P+ doped region disposed between the first and second ends of the elongated N+ doped regions and the surrounding guard ring, and each of the elongated P+ doped regions extend between first and second ends with no N+ doped region disposed between the first and second ends of the elongated P+ doped regions and the surrounding guard ring; and where either:
the first and second ends of the elongated P+ doped regions are each recessed inward relative to the first and second ends of the elongated N+ doped regions such that a lateral distance between each of the first and second ends of the elongated P+ doped regions and the surrounding guard ring is greater than a lateral distance between each of the first and second ends of the elongated N+ doped regions and the surrounding guard ring, orthe first and second ends of the elongated N+ doped regions are each recessed inward relative to the first and second ends of the elongated P+ doped regions such that a lateral distance between each of the first and second ends of the elongated N+ doped regions and the surrounding guard ring is greater than a lateral distance between each of the first and second ends of the elongated P+ doped regions and the surrounding guard ring.