METHOD OF FORMING MASK, AND METHOD OF FORMING IMPURITY DIFFUSION LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a mask that can successfully protect against diffusion of an impurity diffusion component at a position on a semiconductor substrate where diffusion of the impurity diffusion component is not desired when the impurity diffusion component is diffused on the semiconductor substrate, and to provide a method of forming the impurity diffusion layer on the semiconductor substrate comprising the mask formed by the method.SOLUTION: On a semiconductor substrate, a coating film formed by regioselectively applying a mask formation composition containing a siloxane resin is baked to obtain a cured film, and then, the formed cured film is irradiated with a plasma of an inactive gas to form a mask.