发明名称 DIMENSION CALCULATION METHOD FOR A SEMICONDUCTOR DEVICE
摘要 An automatic calculation method for thickness calculation of a deposition layer in a Fin-type field-effect transistor (FinFET) is disclosed through mapping edge lines onto an Excel spreadsheet. The similar method is also applied to the thickness calculation of superlattice or multiple quantum well for a light emitting diode (LED). The edge lines are obtained and transformed from an electronic image taken by Transmission Electron Microscopy (TEM), Focus Ion Beam (FIB), Atomic Force Microscopy (AFM), or X-Ray Diffraction (XRD) of the device.
申请公布号 US2015228065(A1) 申请公布日期 2015.08.13
申请号 US201414175278 申请日期 2014.02.07
申请人 MATERIALS ANALYSIS TECHNOLOGY INC 发明人 BIRING Sajal
分类号 G06T7/00;G06T5/00 主分类号 G06T7/00
代理机构 代理人
主权项 1. A dimension calculation method for a semiconductor device, comprises: image providing; edge detecting; noise removing; edge modifying; data exporting to Excel spreadsheet; and data outputting.
地址 Hsinchu TW