发明名称 |
DIMENSION CALCULATION METHOD FOR A SEMICONDUCTOR DEVICE |
摘要 |
An automatic calculation method for thickness calculation of a deposition layer in a Fin-type field-effect transistor (FinFET) is disclosed through mapping edge lines onto an Excel spreadsheet. The similar method is also applied to the thickness calculation of superlattice or multiple quantum well for a light emitting diode (LED). The edge lines are obtained and transformed from an electronic image taken by Transmission Electron Microscopy (TEM), Focus Ion Beam (FIB), Atomic Force Microscopy (AFM), or X-Ray Diffraction (XRD) of the device. |
申请公布号 |
US2015228065(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201414175278 |
申请日期 |
2014.02.07 |
申请人 |
MATERIALS ANALYSIS TECHNOLOGY INC |
发明人 |
BIRING Sajal |
分类号 |
G06T7/00;G06T5/00 |
主分类号 |
G06T7/00 |
代理机构 |
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代理人 |
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主权项 |
1. A dimension calculation method for a semiconductor device, comprises:
image providing; edge detecting; noise removing; edge modifying; data exporting to Excel spreadsheet; and data outputting. |
地址 |
Hsinchu TW |