| 发明名称 |
PHOTODETECTOR AND METHOD OF FACRICATING THE SAME |
| 摘要 |
The present invention provides a photodetector, which comprises a semiconductor substrate and a light absorbing layer (including metal layer, silicide layer) and the opening structures. In addition, a method of fabricating the abovementioned photodetector is also disclosed in the present invention. |
| 申请公布号 |
US2015228837(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514616890 |
申请日期 |
2015.02.09 |
| 申请人 |
National Taiwan University ;National Applied Research Laboratories |
发明人 |
CHEN Hsuen-Li;LIN Keng-Te;LAI Yu-Sheng;YU Chen-Chieh |
| 分类号 |
H01L31/108;H01L31/028 |
主分类号 |
H01L31/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photodetector, comprising:
a light absorbing layer is formed over the semiconductor substrate and a plurality of opening structures. |
| 地址 |
Taipei TW |
