| 发明名称 |
COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE HAVING PASSIVATION LAYER, PHOTOLOLTAIC CELL ELEMENT, METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL |
| 摘要 |
A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5. |
| 申请公布号 |
US2015228812(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201314415091 |
申请日期 |
2013.07.19 |
| 申请人 |
Hitachi Chemical Company, Ltd. |
发明人 |
Tanaka Tooru;Yoshida Masato;Nojira Takeshi;Kurata Yasushi;Orita Akihiro;Adachi Shuichiro;Hayasaka Tsuyoshi;Hattori Takashi;Matsumura Mieko;Watanabe Keiji;Morishita Masatoshi;Hamamura Hirotaka |
| 分类号 |
H01L31/0216;H01L31/02;H01L31/18 |
主分类号 |
H01L31/0216 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for forming a passivation layer, comprising a resin and a compound represented by the following Formula (I):
M(OR1)m (I) wherein, in Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5. |
| 地址 |
Tokyo JP |
