SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

摘要

A method for fabricating a semiconductor device includes forming a gate structure over a substrate, forming a multi-layer sidewall spacer including a first sacrificial spacer which covers sidewalls of the gate structure and a second sacrificial spacer which is disposed on a sidewall of the first sacrificial spacer and recessed lower than an upper surface of the gate structure, forming an air gap having a narrower width top portion than a middle and a bottom portions, by removing the first and second sacrificial spacers, and forming a capping layer which caps the top portion of the air gap.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a gate structure over a substrate; forming a multi-layer sidewall spacer including a first sacrificial spacer, which covers sidewalls of the gate structure, and a second sacrificial spacer, which is disposed on a sidewall of the first sacrificial spacer and has a height lower than an upper surface of the gate structure; removing the first and second sacrificial spacers to form an air gap having a narrower width top portion than a middle and a bottom portions; and forming a capping layer which caps the top portion of the air gap.