SEMICONDUCTOR DEVICE AND IMAGING DEVICE

摘要

A semiconductor device according to an embodiment of the present invention is provided with a substrate and a thin-film transistor provided on the substrate. The thin-film transistor comprises: an oxynitride semiconductor layer having a first portion, a second portion spaced apart from the first portion, and a third portion provided between the first portion and the second portion; a first electrically conductive layer electrically connected to the first portion; a second electrically conductive layer electrically connected to the second potion; a gate electrode spaced apart from the third portion; and a first insulation layer provided between the third portion and the gate electrode. The oxynitride semiconductor layer comprises indium, gallium, zinc, and nitrogen. The nitrogen content is 2 at% or less, and the gallium content is greater than the nitrogen content.