DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION
摘要
An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.
申请公布号
WO2015119760(A1)
申请公布日期
2015.08.13
申请号
WO2015US11714
申请日期
2015.01.16
申请人
APPLIED MATERIALS, INC.
发明人
REN, HE;NAIK, MEHUL B.;CAO, YONG;SHEK, MEI-YEE;CHENG, YANA;KESAPRAGADA, SREE RANGASAI V.