发明名称 NONVOLATILE MEMORY DEVICE WITH ON-DIE CONTROL AND DATA SIGNAL TERMINATION
摘要 In a non-volatile memory device having an array of non-volatile storage elements, control information received via one or more control input nodes indicates, at different times, that (i) data signals representative of data to be stored within the array of non-volatile storage elements are to be received via a plurality of input/output (I/O) nodes of the non-volatile memory device, and (ii) data signals representative of data read from the array of non-volatile storage elements are to be output via the plurality of I/O nodes. First termination elements are switchably coupled to and decoupled from the I/O nodes based at least in part on the control information, and second termination elements are switchably coupled to and decoupled from the one or more control input nodes based at least in part on the control information.
申请公布号 US2015229306(A1) 申请公布日期 2015.08.13
申请号 US201514695260 申请日期 2015.04.24
申请人 Rambus Inc. 发明人 Oh Kyung Suk;Shaeffer Ian P.
分类号 H03K19/00;G11C16/26;G11C11/419;H03K19/0175;G11C11/4093 主分类号 H03K19/00
代理机构 代理人
主权项 1. A non-volatile memory device comprising: an array of non-volatile storage elements; a plurality of input/output (I/O) nodes to receive data signals representative of data to be stored within the array of non-volatile storage elements and to output data signals representative of data read from the array of non-volatile storage elements; one or more control input nodes to receive control information indicating that data signals are to be received or output via the I/O nodes during a subsequent time interval; and on-die termination circuitry to switchably couple and decouple respective termination elements to and from the I/O nodes based at least in part on the control information, and also to switchably couple and decouple respective termination elements to and from the one or more control input nodes.
地址 Sunnyvale CA US