发明名称 Method for Producing a Laser Diode, Mount and Laser Diode
摘要 In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.
申请公布号 US2015228871(A1) 申请公布日期 2015.08.13
申请号 US201314424688 申请日期 2013.08.27
申请人 OSRAM Opto Semiconductors GmbH 发明人 Enzmann Roland;Haneder Stephan;Swietlik Tomasz;Walter Christoph;Rozynski Andreas;Graul Markus;Auen Karsten;Dachs Jürgen
分类号 H01L33/60;H01L33/62;H01L33/48;H01L33/00 主分类号 H01L33/60
代理机构 代理人
主权项
地址 Regensburg DE