LED ELEMENT, AND PRODUCTION METHOD THEREFOR

摘要

The LED element has a conductive layer formed on the upper layer of the support substrate; a conductive oxide film layer formed on the upper layer of the conductive layer and made of a material having a thermal expansion coefficient of 1×10−6/K or more and 1×10−5/K or less; a light-emitting layer; a third semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer; and an electrode formed at a position facing the conductive oxide film layer in a vertical direction so that a bottom surface of the electrode is in contact with a portion of an upper surface of the third semiconductor layer.

主权项

1. An LED element containing a nitride semiconductor, comprising:
a support substrate made of a conductor or a semiconductor; a conductive layer formed on the upper layer of the support substrate; a conductive oxide film layer formed on the upper layer of the conductive layer; a first semiconductor layer made of a p-type nitride semiconductor formed so that a bottom surface of the first semiconductor layer is in contact with a portion of an upper surface of the conductive layer and a portion of an upper surface of the conductive oxide film layer; a second semiconductor layer formed on the upper layer of the first semiconductor layer and made of a p-type nitride semiconductor having a lower concentration than that of the first semiconductor layer; a light-emitting layer made of a nitride semiconductor formed on the upper layer of the second semiconductor layer; a third semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer; and an electrode formed at a position facing the conductive oxide film layer in a vertical direction so that a bottom surface of the electrode is in contact with a portion of an upper surface of the third semiconductor layer, wherein the conductive oxide film layer is made of a material having a thermal expansion coefficient of 1×10−6/K or more and 1×10−5/K or less.