发明名称 3D BOND AND ASSEMBLY PROCESS FOR SEVERELY BOWED INTERPOSER DIE
摘要 An interposer structure containing a first set of solder balls is placed in proximity to a vacuum distribution plate which has a planar contact surface and a plurality of openings located therein. A vacuum is then applied through the openings within the vacuum distribution plate such that the first set of solder balls are suspended within the plurality of openings and the interposer structure conforms to the planar contact surface of the vacuum distribution plate. A semiconductor chip containing a second set of solder balls is tacked to a surface of the interposer structure. A substrate is then brought into contact with a surface of the interposer structure containing the first set of solder balls, and then a solder reflow and underfill processes can be performed. Warping of the interposer structure is substantially eliminated using the vacuum distribution plate mentioned above.
申请公布号 US2015228614(A1) 申请公布日期 2015.08.13
申请号 US201414177348 申请日期 2014.02.11
申请人 International Business Machines Corporation 发明人 INTERRANTE MARCUS E;Interrante Mario J.;Sakuma Katsuyuki
分类号 H01L23/00;H01L23/498;B23K3/06;H01L25/065;H01L21/683;H01L21/56;H01L25/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A bonding method comprising: inserting an interposer structure into a vacuum distribution plate, wherein said vacuum distribution plate has a planar contact surface; applying a vacuum to a first assembly of said interposer structure and said vacuum distribution plate, wherein said vacuum applies a force to said interposer structure so that said interposer structure is conformed to said planar contact surface of said vacuum distribution plate, wherein conforming said interposer structure to said planar contact surface of said vacuum distribution plate removes a curvature from said interposer structure; tacking a semiconductor chip to a surface of said interposer structure that is opposite a surface of said interposer structure that is in contact with said planar contact surface of said vacuum distribution plate; contacting a second assembly of said interposer structure and said semiconductor chip to a substrate; and applying a furnace reflow process to said second assembly to bond said second assembly to said substrate.
地址 Armonk NY US
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