SEMICONDUCTOR DEVICE AND METHOD OF REMOVING SPACERS ON SEMICONDUCTOR DEVICE

摘要

A manufacturing method for a semiconductor device includes: providing a substrate including a first gate structure disposed thereon, wherein the first gate structure includes a first gate electrode and a first hard mask covers the first gate electrode. A first oxide spacer and a silicon carbon nitride spacer are formed in sequence to surround the first gate electrode. A thermal treatment is performed to form a silicon oxycarbonitride layer between the first oxide spacer and the silicon carbon nitride spacer. Then, a second oxide spacer, a third oxide spacer, and a first silicon nitride spacer are formed on the silicon carbon nitride spacer in sequence. The first hard mask and the first silicon nitride spacer are removed. Finally, the third oxide spacer, the second oxide spacer, and silicon carbon nitride spacer are removed entirely to expose the silicon oxycarbonitride layer.

主权项

1. A manufacturing method for a semiconductor device, comprising
providing a substrate comprising a first gate structure disposed thereon, wherein the first gate structure comprises a first gate electrode and a first hard mask covers the first gate electrode; forming a first oxide spacer surrounding the first gate electrode; forming a silicon carbon nitride spacer covering the first oxide spacer; performing a thermal treatment to form a silicon oxycarbonitride layer between the first oxide spacer and the silicon carbon nitride spacer; forming a second oxide spacer, a third oxide spacer, and a first silicon nitride spacer on the silicon carbon nitride spacer in sequence; removing the first hard mask and the first silicon nitride spacer; and entirely removing the third oxide spacer, the second oxide spacer, and silicon carbon nitride spacer to expose the silicon oxycarbonitride layer.