发明名称 |
Semiconductor Device With Shallow Trench Isolation |
摘要 |
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is formed in the semiconductor substrate, and includes an isolation oxide and a spin coating material. The isolation oxide is peripherally enclosed by the semiconductor substrate. The spin coating material is peripherally enclosed by the isolation oxide. |
申请公布号 |
US2015228534(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201414179659 |
申请日期 |
2014.02.13 |
申请人 |
Taiwan Semiconductor Manufacturing CO., LTD. |
发明人 |
Wu Shang-Yen;Chuang Chiang-Ming;Hsieh Ping-Pang |
分类号 |
H01L21/762;H01L21/3105;H01L21/02;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |