GAS SUPPLY METHOD AND PLASMA PROCESSING APPARATUS

摘要

In the present invention, a gas supply method includes a selecting step and an additive gas supply step. The selecting step involves selecting, in accordance with the type of target film to be processed, a combination of a gas chamber into which additive gas is supplied and the type of additive gas, the gas chamber being selected from a plurality of gas chambers which are divided from a gas injection unit for injecting plasma processing gases into a processing chamber in which a substrate formed with a processing target film is placed. In the additive gas supply step, the additive gas is supplied to the gas chamber on the basis of the combination selected in the selecting step.

主权项

1. A gas supply method comprising:
a selection step of selecting a combination of a gas chamber to be supplied with an additive gas among a plurality of gas chambers divided from a gas injection unit by partitions and a type of additive gas according to a type of processing target film, the gas injection unit being configured to inject a processing gas for use in a plasma processing into a processing chamber in which a substrate formed with the processing target film is placed; and an additive gas supply step of supplying the additive gas into the gas chamber based on the combination selected by the selection step.